Implementation of chemically amplified resist on mask technology below 0.6-um feature using high-acceleration voltage e-beam system

Il-Ho Lee; Kyung-Han Nam; Kyeong-Mee Yeon; Keuntaek Park; Sang-Sool Koo; Youngmo Koo; Ki-Ho Baik

doi:10.1117/12.360240

25 August 1999 Implementation of chemically amplified resist on mask technology below 0.6-μm feature using high-acceleration voltage e-beam system

Il-Ho Lee, Kyung-Han Nam, Kyeong-Mee Yeon, Keuntaek Park, Sang-Sool Koo, Youngmo Koo, Ki-Ho Baik

Author Affiliations +

Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360240
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan

Abstract

We have investigated the performances of positive Chemically Amplified Resist (CAR) with High Acceleration Voltage System on mask fabrication, widely. As we had expected, the resolution and pattern fidelity both after development and after etching were improved dramatically, because of its high contrast and good dry etching durability. As a result, practical resolution limitation was 0.2 micrometer and CD linearity for 0.2 micrometer to approximately 1.0 micrometer pattern range was 0.034 micrometer with Proximity Effect Correction (PEC). We obtained CD uniformity of 31 to approximately 55 nm, to 120 X 120 mm² area.

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Il-Ho Lee, Kyung-Han Nam, Kyeong-Mee Yeon, Keuntaek Park, Sang-Sool Koo, Youngmo Koo, and Ki-Ho Baik "Implementation of chemically amplified resist on mask technology below 0.6-μm feature using high-acceleration voltage e-beam system", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360240

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