Paper
25 August 1999 Pellicle for ArF excimer laser photolithography
Ikuo Sakurai, Toru Shirasaki, Meguru Kashida, Yoshihiro Kubota
Author Affiliations +
Abstract
We have developed pellicle for ArF excimer laser lithography. Especially we have studied light resistivity against ArF excimer laser. We have selected fluoropolymer for ArF pellicle material because of its high transmission against deep uv light. Transmission of the pellicle film at wavelength (lambda) equals 193 nm is over 99.5% at peak value from sinusoidal transmission spectrum. Lifetime of our pellicle film against the ArF excimer laser irradiation is estimated for total exposure energy 70,000 J/cm2. Number of (phi) 300 mm wafer processed within the lifetime becomes 480,000 wafers from the total exposure energy 70,000 J/cm2. Degradation mechanism of pellicle film caused by the ArF excimer laser irradiation has been investigated. The degradation mechanism is interpreted as following. Pellicle film is first etched from its surface by the ArF excimer laser irradiation. This etching of the pellicle film causes the film thickness reduction and roughens the surface of the pellicle film. Thus the transmission is reduced. The pellicle film material, which is fluoropolymer, however, has not changed on chemical basis. Fluorination of the pellicle film material, i.e., fluoropolymer, has improved its light resistivity against ArF excimer laser. Further fluorination of pellicle film material is expected to improve more its light resistivity against ArF excimer laser.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ikuo Sakurai, Toru Shirasaki, Meguru Kashida, and Yoshihiro Kubota "Pellicle for ArF excimer laser photolithography", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360212
Lens.org Logo
CITATIONS
Cited by 6 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Pellicles

Excimer lasers

Laser irradiation

Semiconducting wafers

Optical lithography

Etching

Lithography

RELATED CONTENT

Advances In Excimer Laser Lithography
Proceedings of SPIE (September 01 1987)
New antireflective layer for deep-UV lithography
Proceedings of SPIE (June 01 1992)
Deep UV Lithography: Problems And Potential
Proceedings of SPIE (September 01 1987)
Evaluation of a 193-nm resist and imaging system
Proceedings of SPIE (September 15 1993)

Back to Top