Characterization of optical properties of PtSi at 3.392 um from 300 K to 85 K and the relation of morphological effects

Shane O'Prey; Gerald F. Cairns; Paul Dawson

doi:10.1117/12.366733

26 October 1999 Characterization of optical properties of PtSi at 3.392 μm from 300 K to 85 K and the relation of morphological effects

Shane O'Prey, Gerald F. Cairns, Paul Dawson

Author Affiliations +

Proceedings Volume 3794, Materials and Electronics for High-Speed and Infrared Detectors; (1999) https://doi.org/10.1117/12.366733
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

PtSi/Si Schottky junctions, fabricated using a conventional technique of Pt deposition with a subsequent thermal anneal, are examined using X-ray diffraction, atomic force microscopy and a novel prism/gap/sample optical coupling system. With the aid of X-ray diffraction and atomic force microscopy it is shown that a post-anneal etch in aqua regia is essential for the removal of an unreacted, rough surface layer of Pt, to leave a much smoother PtSi film. The prism/gap/sample or Otto coupling ring is mounted in a small UHV chamber and has facilities for remote variation of the gap (by virtue of a piezo-actuator system) and variation of the temperature in the range of approximately 300 K - 85 K. The system is used to excite surface plasmon polaritons on the outer surface of the PtSi and thus produce sensitive optical characterization as a function of temperature. This is performed in order to yield an understanding of the temperature dependence of phonon and interface scattering of carriers in the PtSi.

Citation Download Citation

Shane O'Prey, Gerald F. Cairns, and Paul Dawson "Characterization of optical properties of PtSi at 3.392 μm from 300 K to 85 K and the relation of morphological effects", Proc. SPIE 3794, Materials and Electronics for High-Speed and Infrared Detectors, (26 October 1999); https://doi.org/10.1117/12.366733

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