Paper
10 June 1999 Gigantic splash of the weak optical radiation gain in intrinsic threshold photoconductive devices (photoresistors) on an increase in the concentration of recombination centers
Vyacheslav A. Kholodnov
Author Affiliations +
Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350890
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation
Abstract
Detailed theoretical analysis of the dependence of the weak optical radiation gain on the concentration of recombination centers in intrinsic impurity-type-recombination photoconductors with extracting current contacts is carried out. The model of a single recombination level is considered. It is shown that the carrier lifetimes and the gain may strongly non-monotonically depend on the concentration of recombination impurity atoms. The conditions under which these effects take place are determined, and the physical mechanisms responsible for it are found out. The formulae for the locations of the extrema of the considered dependences are obtained. It is shown that the gain splash value depends non-monotonically on the applied voltage at the cost of photoinduced space charge. The maximally possible photogain is evaluated.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vyacheslav A. Kholodnov "Gigantic splash of the weak optical radiation gain in intrinsic threshold photoconductive devices (photoresistors) on an increase in the concentration of recombination centers", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); https://doi.org/10.1117/12.350890
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Cited by 5 scholarly publications.
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KEYWORDS
Neodymium

Semiconductors

Diffusion

Photoresistors

Chemical species

Platinum

Silicon

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