Negative conductance in HgCdTe photodiodes

K. O. Boltar; L. A. Bovina; L. D. Saginov; V. N. Soliakov; Vitaly I. Stafeev

doi:10.1117/12.350914

10 June 1999 Negative conductance in HgCdTe photodiodes

K. O. Boltar, L. A. Bovina, L. D. Saginov, V. N. Soliakov, Vitaly I. Stafeev

Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350914
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation

Abstract

Current-voltage characteristics of LN2 cooled MCT p-n tunnel junctions have been investigated. The negative differential conductance takes place at negative total current due to photocurrent bias. This gives possibility of current oscillation without external electric power.

Citation Download Citation

K. O. Boltar, L. A. Bovina, L. D. Saginov, V. N. Soliakov, and Vitaly I. Stafeev "Negative conductance in HgCdTe photodiodes", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); https://doi.org/10.1117/12.350914

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