KTP532/YAG laser and its application to processing amorphous silicon solar cells

Yahua Li; Zhengjia Li; Changhong Zhu; Qingrong Ren

doi:10.1117/12.361107

8 September 1999 KTP532/YAG laser and its application to processing amorphous silicon solar cells

Yahua Li, Zhengjia Li, Changhong Zhu, Qingrong Ren

Proceedings Volume 3862, 1999 International Conference on Industrial Lasers; (1999) https://doi.org/10.1117/12.361107
Event: International Symposium on Industrial Lasers, 1999, Wuhan, China

Abstract

The purpose of program is researching the green laser amorphous silicon (a-si) solar cells material processing system and the technology of processing. The a-si cells absorption spectrum peak due to light wavelength is near 0.55 micrometers region, which is very closed to 0.53 micrometers wavelength, the second harmonic generation of 1.06 micrometers Nd:YAG laser. Using nonlinear crystal frequency doubled and Q-switch modulating technology, we can obtain more than 10 W 0.53 micrometers laser power.

Citation Download Citation

Yahua Li, Zhengjia Li, Changhong Zhu, and Qingrong Ren "KTP532/YAG laser and its application to processing amorphous silicon solar cells", Proc. SPIE 3862, 1999 International Conference on Industrial Lasers, (8 September 1999); https://doi.org/10.1117/12.361107

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