Deposited Dielectrics For III-V Semiconducting Devices

Larry G. Meiners

doi:10.1117/12.934986

8 November 1983 Deposited Dielectrics For III-V Semiconducting Devices

Larry G. Meiners

Proceedings Volume 0387, Technology of Stratified Media; (1983) https://doi.org/10.1117/12.934986
Event: 1983 Los Angeles Technical Symposium, 1983, Los Angeles, United States

Abstract

Options for coating III-V semiconducting material with insulating layers are discussed with regard to the physical and electrical properties of the deposited layers. Emphasis is on those techniques which minimize charging effects in the interfacial layers. Results on gallium arsenide, indium phosphide, indium arsenide, indium antimonide and indium gallium arsenide are discussed.

Citation Download Citation

Larry G. Meiners "Deposited Dielectrics For III-V Semiconducting Devices", Proc. SPIE 0387, Technology of Stratified Media, (8 November 1983); https://doi.org/10.1117/12.934986

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