Conditions of arising and nature of the dislocation magnetism of deformed silicon crystals

Alexander V. Brodovoi; V. G. Kolesnichenko; Valery V. Skorokhod; S. M. Solonin; S. P. Kolesnik; V. A. Brodovoi; G. A. Zykov; Oleg S. Zinets

doi:10.1117/12.368365

4 November 1999 Conditions of arising and nature of the dislocation magnetism of deformed silicon crystals

Alexander V. Brodovoi, V. G. Kolesnichenko, Valery V. Skorokhod, S. M. Solonin, S. P. Kolesnik, V. A. Brodovoi, G. A. Zykov, Oleg S. Zinets

Author Affiliations +

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368365
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

The magnetic susceptibility of initial n-Si single crystal with the current carrier concentration 1.2-10¹⁴ cm^-3 and the same crystals after uniaxial deformation up to 11 percent was measured by the Faraday method at room temperature in the range of 0.1-4 kOe. It was found that initial undeformed silicon samples were diamagnetic ones with susceptibility of -2.29- 10^-7 cm³g-¹ which is independent on the magnetic field strength. The presence of dislocations in silicon crystals essentially influences on the magnetic susceptibility, the dependence of the magnetic susceptibility on the magnetic field being strongly nonlinear. The non-resonance microwave response has been investigated using the ESR spectroscopy technique. The hysteresis of the microwave absorption was observed that is typical for a magnetic ordering. Possible explanation of unusual magnetic properties of silicon and the connection of these property with appearance of microcracks in strongly deformed silicon has been proposed.

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Alexander V. Brodovoi, V. G. Kolesnichenko, Valery V. Skorokhod, S. M. Solonin, S. P. Kolesnik, V. A. Brodovoi, G. A. Zykov, and Oleg S. Zinets "Conditions of arising and nature of the dislocation magnetism of deformed silicon crystals", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368365

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