High-throughput NGL electron-beam direct-write lithography system

N. William Parker; Alan D. Brodie; John H. McCoy

doi:10.1117/12.390042

21 July 2000 High-throughput NGL electron-beam direct-write lithography system

N. William Parker, Alan D. Brodie, John H. McCoy

Proceedings Volume 3997, Emerging Lithographic Technologies IV; (2000) https://doi.org/10.1117/12.390042
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Electron beam lithography systems have historically had low throughput. The only practical solution to this limitation is an approach using many beams writing simultaneously. For single-column multi-beam systems, including projection optics (SCALPEL^R and PREVAIL) and blanked aperture arrays, throughput and resolution are limited by space-charge effects. Multibeam micro-column (one beam per column) systems are limited by the need for low voltage operation, electrical connection density and fabrication complexities. In this paper, we discuss a new multi-beam concept employing multiple columns each with multiple beams to generate a very large total number of parallel writing beams. This overcomes the limitations of space-charge interactions and low voltage operation. We also discuss a rationale leading to the optimum number of columns and beams per column. Using this approach we show how production throughputs >= 60 wafers per hour can be achieved at CDs <EQ 100 nm, independent of both wafer diameter and die size. The Cost-of-Ownership (CoO) advantages of direct-write (maskless) lithography are significant especially for small-volume semiconductor fabrication, for example ASICs, SOCs and MPUs.

Citation Download Citation

N. William Parker, Alan D. Brodie, and John H. McCoy "High-throughput NGL electron-beam direct-write lithography system", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390042

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