Computer modeling of charging-induced electron beam deflection in electron beam lithography

Justin J. Hwu; Yeong-Uk Ko; David C. Joy

doi:10.1117/12.386477

2 June 2000 Computer modeling of charging-induced electron beam deflection in electron beam lithography

Justin J. Hwu, Yeong-Uk Ko, David C. Joy

Proceedings Volume 3998, Metrology, Inspection, and Process Control for Microlithography XIV; (2000) https://doi.org/10.1117/12.386477
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

The charging of the workpiece in electron beam direct writing processes has been identified as a problem that disturbs the electron beam and causes pattern displacement error. In this paper the electron beam deflection caused by surface charging is evaluated by the SIMION and MATHEMATICA simulation programs. Isolated charged patterns of different geometry are simulated as electrodes with given potentials in SIMION to calculate the extent of beam deflection, while secondary electron emission yield and beam dosage are assigned in MATHEMATICA programming for determination of surface potential and spatial field, from which the beam deflection is then calculated. The simulation results are in good agreement with each other and they are compared with values available in literature. The initial charge content along with the pattern dimensions chosen in simulation are found to be the major factors that determine the extent of beam deflection. The limitation of SIMION simulation on the beam deflection is also discussed.

Citation Download Citation

Justin J. Hwu, Yeong-Uk Ko, and David C. Joy "Computer modeling of charging-induced electron beam deflection in electron beam lithography", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386477

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