Image shortening and process development in BEOL lithography

Ronald DellaGuardia; Dennis J. Warner; Zheng Chen; Martin Stetter; Richard A. Ferguson; Anne E. McGuire; Karen D. Badger

doi:10.1117/12.388928

5 July 2000 Image shortening and process development in BEOL lithography

Ronald DellaGuardia, Dennis J. Warner, Zheng Chen, Martin Stetter, Richard A. Ferguson, Anne E. McGuire, Karen D. Badger

Author Affiliations +

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.388928
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

The problem of image shortening is well known in semiconductor lithography. As rectangular features decrease in width, the length of the feature will print smaller than the mask image length. This problem places a constraint upon overall device design because space must be allowed for line extensions and/or adding to the side of features. Making corrections for image shortening requires mask redesign, which increases the time and cost of new product development.

Citation Download Citation

Ronald DellaGuardia, Dennis J. Warner, Zheng Chen, Martin Stetter, Richard A. Ferguson, Anne E. McGuire, and Karen D. Badger "Image shortening and process development in BEOL lithography", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388928

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