Manufacturability of 248-nm phase-shift lithography for 100-nm transistors

Mark E. Mason; John N. Randall; Keeho Kim

doi:10.1117/12.388971

5 July 2000 Manufacturability of 248-nm phase-shift lithography for 100-nm transistors

Mark E. Mason, John N. Randall, Keeho Kim

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.388971
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

The timing of 193nm tools and the resist to support them is driving semiconductor manufacturers to plan for production of sub-half lambda features on 248nm exposure tools. Lithographers are turning to reticle enhancements to close the capability gap, finding that there are a myriad of issues that must be addressed to achieve production- worthiness.

Citation Download Citation

Mark E. Mason, John N. Randall, and Keeho Kim "Manufacturability of 248-nm phase-shift lithography for 100-nm transistors", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388971

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