Excimer laser surface processing of Si3N4 and AlN

L. Yaghdjian; Gilbert Vacquier; Andre Fabre; Michel L. Autric

doi:10.1117/12.378159

25 February 2000 Excimer laser surface processing of Si₃N₄ and AlN

L. Yaghdjian, Gilbert Vacquier, Andre Fabre, Michel L. Autric

Proceedings Volume 4070, ALT '99 International Conference on Advanced Laser Technologies; (2000) https://doi.org/10.1117/12.378159
Event: ALT'99 International Conference: Advanced Laser Technologies, 1999, Potenza-Lecce, Italy

Abstract

We report on the investigation of XeF excimer laser ablation of YNi₂B₂C target by energy selective time-of-flight mass spectrometry (ES-TOFMS). ES-TOFMS allows laser plume investigation by providing a direct measurement of the ions kinetic energy and, through the TOF measurement, their simultaneous mass identification. In particular, the composition and the kinetic energy of the emitted ions has been accomplished by means of TOF technique coupled with a 160 degrees electrostatic energy analyzer. The analysis of the charged species composition and kinetic energy has been performed at different laser fluences and in high vacuum conditions.

Citation Download Citation

L. Yaghdjian, Gilbert Vacquier, Andre Fabre, and Michel L. Autric "Excimer laser surface processing of Si₃N₄ and AlN", Proc. SPIE 4070, ALT '99 International Conference on Advanced Laser Technologies, (25 February 2000); https://doi.org/10.1117/12.378159

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