Gallium Arsenide Clad Optical Waveguide Modulators

G. M. McWright; T. E. Batchman; R. F. Carson

doi:10.1117/12.935720

30 November 1983 Gallium Arsenide Clad Optical Waveguide Modulators

G. M. McWright, T. E. Batchman, R. F. Carson

Proceedings Volume 0408, Integrated Optics III; (1983) https://doi.org/10.1117/12.935720
Event: 1983 Technical Symposium East, 1983, Arlington, United States

Abstract

Computer modeling studies on planar dielectric optical waveguides clad with gallium arsenide indicate that the attenuation and mode index behave as exponentially damped sinusoids as the semiconductor thickness in increased. This effect is due to a periodic coupling between the TE0 mode of the dielectric and the lossy modes supported by the high refractive index gallium aresenide. For guided wave propagation near the semiconductor band edge, the complex permittivity of the gallium arsenide may be altered through electron-hole pair generation via second photon excitation. This pair generation process is investigated as a means of controlling guided wave propagation, and amplitude and phase modulators are examined.

Citation Download Citation

G. M. McWright, T. E. Batchman, and R. F. Carson "Gallium Arsenide Clad Optical Waveguide Modulators", Proc. SPIE 0408, Integrated Optics III, (30 November 1983); https://doi.org/10.1117/12.935720

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