Preparation and characterization of silicon carbide thin films synthesized by rf reactive sputtering

Xiaofeng Peng; Yuzhi Zhang; Lixin Song; Xingfang Hu

doi:10.1117/12.408436

29 November 2000 Preparation and characterization of silicon carbide thin films synthesized by rf reactive sputtering

Xiaofeng Peng, Yuzhi Zhang, Lixin Song, Xingfang Hu

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408436
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

Carbon-rich SiC thin films were synthesized by rf-reactive sputtering at different anodic voltages, 1.2 kV, 1.6 kV and 2.0 kV respectively. XPS, FTIR, Raman spectra and Nano Indentor microhardness were used to characterize as- deposited thin films. The results showed that higher anodic voltage enabled to increase Si-C bond and sp³-bonded carbon atoms in the films. The sample grown at 2.0 kV exhibited Si/C ratio of nearly 1 from XPS results, a pronounced Si-C peak in the FTIR spectra, only a weak peak at 1420 cm^-1 and no other graphite peak in the Raman spectra, the microhardness of 25.2 GPa.

Citation Download Citation

Xiaofeng Peng, Yuzhi Zhang, Lixin Song, and Xingfang Hu "Preparation and characterization of silicon carbide thin films synthesized by rf reactive sputtering", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408436

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