Etching characteristics of organic low-k dielectrics in the helicon-wave plasma etcher for 0.15-um damascene architecture

Jia-Min Shieh; T. C. Wei; C. H. Liu; Shich-Chang Suen; Bau-Tong Dai

doi:10.1117/12.395724

18 August 2000 Etching characteristics of organic low-k dielectrics in the helicon-wave plasma etcher for 0.15-μm damascene architecture

Jia-Min Shieh, T. C. Wei, C. H. Liu, Shich-Chang Suen, Bau-Tong Dai

Author Affiliations +

Proceedings Volume 4181, Challenges in Process Integration and Device Technology; (2000) https://doi.org/10.1117/12.395724
Event: Microelectronic Manufacturing, 2000, Santa Clara, CA, United States

Abstract

The comparative analysis of the dry etching of FLARE 2.0 and a- C:F, which represent two different depositions techniques of organic low-k polymers was investigated. In our damascene architecture, the etchings to player or hard-mask of both SIOF; SiO₂ was studied. Especially, the SiOF providing lower dielectric constant than SIO₂ would reduce entire effective dielectric constant. The etch rate and etching rate selectivity was optimized by changing content ratio between CHF₃, N₂ and O₂. Furthermore, the bias power, RF power; and gas flows were changed to control the etch profile. The SEM result showed that the better etch profile can be obtained at higher bias power. There were some deviation between etching rate of blanket with the case of patterned wafer. The distribution density of the reactant etching gas in sub-um gap different from blanket surface of wafer was major dynamics. Due to this phenomena, the etching rate became nonlinear function of process time T_etch in the trenches/vias with smaller dimension.

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Jia-Min Shieh, T. C. Wei, C. H. Liu, Shich-Chang Suen, and Bau-Tong Dai "Etching characteristics of organic low-k dielectrics in the helicon-wave plasma etcher for 0.15-μm damascene architecture", Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); https://doi.org/10.1117/12.395724

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