Passive and active quenching of Si avalanche photodiodes at low temperatures

Chuang Liang; Donghao Fu; Ling-An Wu

doi:10.1117/12.401674

3 October 2000 Passive and active quenching of Si avalanche photodiodes at low temperatures

Chuang Liang, Donghao Fu, Ling-An Wu

Proceedings Volume 4220, Advanced Photonic Sensors: Technology and Applications; (2000) https://doi.org/10.1117/12.401674
Event: Optics and Optoelectronic Inspection and Control: Techniques, Applications, and Instruments, 2000, Beijing, China

Abstract

Silicon avalanche photodiodes operated int he Geiger mode are capable of detecting single photons in the near infrared regime. We have designed and tested two types of quenching circuit, with a dead time of about 1 microsecond in the passive quenching mode and 60 ns in the active quenching mode. The performance of our detectors under various operating temperatures has been investigated, and measurements down to liquid nitrogen temperatures are reported for the first time.

Citation Download Citation

Chuang Liang, Donghao Fu, and Ling-An Wu "Passive and active quenching of Si avalanche photodiodes at low temperatures", Proc. SPIE 4220, Advanced Photonic Sensors: Technology and Applications, (3 October 2000); https://doi.org/10.1117/12.401674

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