InP/InGaAs/InP double heterojunction bipolar transistors with improved dc and microwave performance grown by solid source molecular beam-epitaxy

Hong Wang; Geok Ing Ng; Hai Qun Zheng; Kaladhar Radhakrishnan; Soon Fatt Yoon; Yongzhong Xiong; Lye Heng Chua; Hongru Yang; Subrata Halder; Chee Leong Tan

doi:10.1117/12.405397

24 October 2000 InP/InGaAs/InP double heterojunction bipolar transistors with improved dc and microwave performance grown by solid source molecular beam epitaxy

Hong Wang, Geok Ing Ng, Hai Qun Zheng, Kaladhar Radhakrishnan, Soon Fatt Yoon, Yongzhong Xiong, Lye Heng Chua, Hongru Yang, Subrata Halder, Chee Leong Tan

Author Affiliations +

Proceedings Volume 4227, Advanced Microelectronic Processing Techniques; (2000) https://doi.org/10.1117/12.405397
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

This paper describes the fabrication and characterization of the InP/InAs/InP double heterojunction bipolar transistors grown by solid-source molecular beam epitaxy (SSMBE). An improvement in current gain and microwave noise has been observed for the SSMBE-grown InP/InGaAs DHBTs. The HBT with a 50 nm, 2 X 19 cm^-3 Be-doped base exhibits dc current gain as high as 350, which is about two times of that measured on the referenced devices grown by gas-source molecular beam epitaxy. The HBT with 5 X 5 micrometers ² emitter shows a minimum noise figure of 1.04 dB and associated gain of 16 dB measured at 2 GHz with I_c equals 1 mA. In comparison, the HBT grown by GSMBE gives an F_min of 1.9 dB under same measurement condition. A slight increase in f_T and f_max for the SSMBE-grown HBT has also been observed. The drastic increase of current gain for the SSMBE-grown HBT could be explained by reducing base recombination due to the ful elimination of hydrogen contamination during the material growth.

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Hong Wang, Geok Ing Ng, Hai Qun Zheng, Kaladhar Radhakrishnan, Soon Fatt Yoon, Yongzhong Xiong, Lye Heng Chua, Hongru Yang, Subrata Halder, and Chee Leong Tan "InP/InGaAs/InP double heterojunction bipolar transistors with improved dc and microwave performance grown by solid source molecular beam epitaxy", Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); https://doi.org/10.1117/12.405397

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