New integrated optical memory based on the plasma wave modulator/switch

Sina Khorasani; Alireza Nojeh; Bizhan Rashidian

doi:10.1117/12.426809

15 May 2001 New integrated optical memory based on the plasma wave modulator/switch

Sina Khorasani, Alireza Nojeh, Bizhan Rashidian

Proceedings Volume 4277, Integrated Optics Devices V; (2001) https://doi.org/10.1117/12.426809
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

The feasibility of an integrated optical memory is explored. This memory cell is based on the plasma wave modulator/switch, which has a horizontal layered structure. A transverse voltage maintains a bias for the structure and can be used for electrical write cycle. The cell content is then read by a propagating guided optical wave across the structure. It is also possible to apply full optical read/write/clear cycles as discussed. The read cycle can be either destructive or non-destructive, depending on the wavelength. A modification of this device may be considered as an opto-transistor, in which an optical signal controls the flow of another optical beam.

Citation Download Citation

Sina Khorasani, Alireza Nojeh, and Bizhan Rashidian "New integrated optical memory based on the plasma wave modulator/switch", Proc. SPIE 4277, Integrated Optics Devices V, (15 May 2001); https://doi.org/10.1117/12.426809

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