Comparative analysis of alternative technological approaches to visible-blind semiconductor photodetectors fabrication

Oleg N. Ermakov

doi:10.1117/12.407742

28 November 2000 Comparative analysis of alternative technological approaches to visible-blind semiconductor photodetectors fabrication

Oleg N. Ermakov

Author Affiliations +

Proceedings Volume 4340, 16th International Conference on Photoelectronics and Night Vision Devices; (2000) https://doi.org/10.1117/12.407742
Event: XVI International Conference on Photoelectronics and Night Vision Devices, 2000, Moscow, Russian Federation

Abstract

Different aspects of research and development of UV- sensitive photodetectors, based both on different inorganic and organic media including single crystalline, polycrystalline and polymer structures. Data are presented for photodetectors with enhance UV-sensitivity based on Si, silicon-on-sapphire (SOS), InGaAsP, GaAlP alloys GaN and polymer structures. It has been found that despite different character of band structure (both direct and indirect) and different value of band gap energy in all these cases (UV-sensitive photodetectors can be made. It has been shown that by design parameters optimization and band gap engineering it is possible to vary photodetectors characteristics in wide range. Two alternative technological approaches have been analyzed for visible- blind UV-photodetectors fabrication. The first approach utilizes photodetectors with enhanced UV-sensitive based on traditional semiconductor materials and built-in UV-filter for damping of visible sensitivity component. Alternative approach eliminating the built-in UV-filter is based on utilization of new wide-gap materials (gallium nitride and polymer structures).

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Oleg N. Ermakov "Comparative analysis of alternative technological approaches to visible-blind semiconductor photodetectors fabrication", Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); https://doi.org/10.1117/12.407742

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