193-nm single-layer resists based on advanced materials

Naomi Shida; Tohru Ushirogouchi; Koji Asakawa; Yoshinori Funaki; Akira Takaragi; Kiyoharu Tsutsumi; Keizo Inoue; Tatsuya Nakano

doi:10.1117/12.436817

24 August 2001 193-nm single-layer resists based on advanced materials

Naomi Shida, Tohru Ushirogouchi, Koji Asakawa, Yoshinori Funaki, Akira Takaragi, Kiyoharu Tsutsumi, Keizo Inoue, Tatsuya Nakano

Author Affiliations +

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436817
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

Recent advances in the 193-nm single-layer resist for forming finer patterns have led us to search for new resist materials for the ArF excimer laser. We describe novel, mass productive single layer resist based on hybrid hyper lactonic polymer which has high resolution, good hydrophilicity, and dry etch resistance. Further, we investigate the lactonic polymer, which has Mass-productive Ultimate Norbornyl group with Outstanding Solubility (MUNGOS).

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Naomi Shida, Tohru Ushirogouchi, Koji Asakawa, Yoshinori Funaki, Akira Takaragi, Kiyoharu Tsutsumi, Keizo Inoue, and Tatsuya Nakano "193-nm single-layer resists based on advanced materials", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436817

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