Patterning of random interconnect using double exposure of strong-type PSMs

Hiroshi Fukuda; Takuya Hagiwara

doi:10.1117/12.435767

14 September 2001 Patterning of random interconnect using double exposure of strong-type PSMs

Hiroshi Fukuda, Takuya Hagiwara

Proceedings Volume 4346, Optical Microlithography XIV; (2001) https://doi.org/10.1117/12.435767
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

This paper discusses a new PSM algorithm to generate a pair of sub-mask patterns to achieve 2-D random patterns by double exposure. Test layout was automatically decomposed into two sub-PSMs with about 190 steps of geometrical operations including simple OPCs. Both simulation and experiments showed that 0.28-micrometer pitch random wiring is achieved with our method, suggesting local wiring at 70- (50-) nm node logic LSIs combined with ArF (F2) exposure tools.

Citation Download Citation

Hiroshi Fukuda and Takuya Hagiwara "Patterning of random interconnect using double exposure of strong-type PSMs", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435767

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