Method of forming tiny silicon nitride spacer for flash EPROM

H. H. Liu; K. C. Wu; Yuan-Ko Hwang; Shih-Shiung Chen

doi:10.1117/12.425240

20 April 2001 Method of forming tiny silicon nitride spacer for flash EPROM

H. H. Liu, K. C. Wu, Yuan-Ko Hwang, Shih-Shiung Chen

Proceedings Volume 4405, Process and Equipment Control in Microelectronic Manufacturing II; (2001) https://doi.org/10.1117/12.425240
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

The silicon nitride spacer technology is widely used in split gate non-volatile memory device sand flash EPROM. A tiny spacer structure is formed on tunnel oxide layer adjacent to the sidewall of floating gate electrode to prevent write disturbance that caused by reverse tunneling. But the processing is very critical for such flash EPROM devices since the dimension the SN spacer are so small. It was influenced not only by SN spacer dry etching but also later photo-resistance strip process of implantation for threshold voltage adjustment. A new method of forming tiny SN spacer by using anisotropic dry etching and isotropic wet etching was presented in this paper.

Citation Download Citation

H. H. Liu, K. C. Wu, Yuan-Ko Hwang, and Shih-Shiung Chen "Method of forming tiny silicon nitride spacer for flash EPROM", Proc. SPIE 4405, Process and Equipment Control in Microelectronic Manufacturing II, (20 April 2001); https://doi.org/10.1117/12.425240

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