Optimization of a high-voltage process using TCAD

Jim McGinty; Chris Porteous; Dave McAlpine; Martin Fallon

doi:10.1117/12.425251

20 April 2001 Optimization of a high-voltage process using TCAD

Jim McGinty, Chris Porteous, Dave McAlpine, Martin Fallon

Proceedings Volume 4405, Process and Equipment Control in Microelectronic Manufacturing II; (2001) https://doi.org/10.1117/12.425251
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

Time to market is the major driver for today's semiconductor products. Technology and product development must occur in parallel if a competitive time to market is to be obtained. Correct use of Technology Computer Aided Design (TCAD) tools can reduce the effort of technology development by quickly examining the process design space and highlighting the more favorable process options. An example of the use of TCAD tools within technology development is illustrated here in the development of a high voltage module for a Smart Power process. The major challenge in any Smart Power process is the trade-off between maximum breakdown voltage and minimizing the on-resistance of the process. The technology uses an N Channel Vertical Double Diffused MOSFET with a breakdown voltage of 50 Volts and an on- resistance of 0.224 (Omega) .mm². The high voltage module must sustain a breakdown voltage of 80 Volts with minimum increase in the on-resistance. A Design of Experiment approach to both device layout and process technology development is used to ensure that both layout and process sensitivities are rigorously considered in designing-in the manufacturability of the technology at the development stage.

Citation Download Citation

Jim McGinty, Chris Porteous, Dave McAlpine, and Martin Fallon "Optimization of a high-voltage process using TCAD", Proc. SPIE 4405, Process and Equipment Control in Microelectronic Manufacturing II, (20 April 2001); https://doi.org/10.1117/12.425251

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