Growth and photoelectric properties of polycrystal Pb1-x-yGexSnyTe:In thin films

Alexander I. Dirochka; Vladimir F. Chishko; Igor L. Kasatkin; Vyacheslav N. Vasil'kov; Alexandre G. Moisseenko

doi:10.1117/12.425409

17 April 2001 Growth and photoelectric properties of polycrystal Pb_1-x-yGe_xSn_yTe:In thin films

Alexander I. Dirochka, Vladimir F. Chishko, Igor L. Kasatkin, Vyacheslav N. Vasil'kov, Alexandre G. Moisseenko

Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425409
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

Pb_1-x-yGe_xSn_yTe:In thin films were made using hot wall modified method. The composition of grown films approximately corresponds to the initial composition of the polycrystalline charge when using this method. Maximum observed concentration deviation (in comparison to charge) of different components in resulting films was: (Delta) n_PbGeSn

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Alexander I. Dirochka, Vladimir F. Chishko, Igor L. Kasatkin, Vyacheslav N. Vasil'kov, and Alexandre G. Moisseenko "Growth and photoelectric properties of polycrystal Pb_1-x-yGe_xSn_yTe:In thin films", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425409

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