Technology and properties of GaAlAsSb layers grown on GaSb substrates

M. Piskorski; Ewa Papis-Polakowska; Tadeusz T. Piotrowski; K. Golaszewska; J. Katcki; J. Ratajczak; J. Adamczewska; A. Barcz; M. Zielinski; Anna Piotrowska

doi:10.1117/12.425407

17 April 2001 Technology and properties of GaAlAsSb layers grown on GaSb substrates

M. Piskorski, Ewa Papis-Polakowska, Tadeusz T. Piotrowski, K. Golaszewska, J. Katcki, J. Ratajczak, J. Adamczewska, A. Barcz, M. Zielinski, Anna Piotrowska

Author Affiliations +

Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425407
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

LPE growth of Ga_1-xAl_xAs_ySb_1-y on (100) GaSb substrates has been investigated for wide range of aluminum content in the melt, x_Al¹=0.01 - 0.06, various growth temperatures, and various amount of supersaturation. Epilayers were characterized by means of XRD, TEM, EPXMA, and SIMS. It has been found that LPE growth at Tapproximately equals 530⁰C produces good quality Ga_1-xAl_xAs_ySb_1-y layers with Al content in the solid up to x equals0.24 and latice mismatch (delta) a/a not exceeding 5*10^-4. As for the growth of higher aluminum content alloys at higher temperatures Tequals590 - 600⁰C, good results have been obtained unless the Al content in the melt does not exceed x_Al¹equals0.02 giving perfectly matched Ga_{1- x}Al_xAs_ySb_1-y epilayers with Al content in the solid by up to x equals0.3. By introducing an interlayer, either of the lattice matched Ga_0.91In_0.09As_0.08Sb_0.92 or Ga_0.70Al_0.30As_0.03Sb_0.97, LPE growth from the melt with Al content up to x_Al¹equals0.06 becomes possible and enables fabrication of Ga_1-xAl_xAs_ySb_1-y layers with Al content in the solid as high as xequals0.62. Ga_1-xAl_xAs_ySb_1-y layers obtained from the melt with x_Al¹equals0.04 were characterized by lattice mismatch (Delta) a/aequals(8-9)-10^-4, an increase of (Delta) a/a to 2.2*10^-3 was observed for epilayers obtained from the melt with x_Al¹equals0.06.

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M. Piskorski, Ewa Papis-Polakowska, Tadeusz T. Piotrowski, K. Golaszewska, J. Katcki, J. Ratajczak, J. Adamczewska, A. Barcz, M. Zielinski, and Anna Piotrowska "Technology and properties of GaAlAsSb layers grown on GaSb substrates", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425407

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