Modeling of photochemical changes and photodarkening of AsSe films under pulse vacuum ultraviolet radiation

N. A. Kaliteevskaia; Ruben P. Seisyan

doi:10.1117/12.431238

26 June 2001 Modeling of photochemical changes and photodarkening of AsSe films under pulse vacuum ultraviolet radiation

N. A. Kaliteevskaia, Ruben P. Seisyan

Author Affiliations +

Proceedings Volume 4423, Nonresonant Laser-Matter Interaction (NLMI-10); (2001) https://doi.org/10.1117/12.431238
Event: Nonresonant Laser-Matter Interaction (NLMI-10), 2000, St. Petersburg, Russian Federation

Abstract

The theoretical description of photochemical transformation process of glassy chalcogenide semiconductor films has bene developed. The effect of pulsed ArF excimer laser radiation on glassy chalcogenide semiconductor is analyzed. It is found that photochemical transformation of AsSe is characterized by optical sensitivity about 3 cm³/kJ and threshold radiation intensity about 17 kJ/(cm² sec).

Citation Download Citation

N. A. Kaliteevskaia and Ruben P. Seisyan "Modeling of photochemical changes and photodarkening of AsSe films under pulse vacuum ultraviolet radiation", Proc. SPIE 4423, Nonresonant Laser-Matter Interaction (NLMI-10), (26 June 2001); https://doi.org/10.1117/12.431238

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