Peculiarity of CO2 laser radiation interaction with semiconductor AIIBVI compounds

Anel F. Mukhammedgalieva; V. S. Petukhov; B. I. Vasiliev

doi:10.1117/12.431214

26 June 2001 Peculiarity of CO₂ laser radiation interaction with semiconductor A_IIB_VI compounds

Anel F. Mukhammedgalieva, V. S. Petukhov, B. I. Vasiliev

Proceedings Volume 4423, Nonresonant Laser-Matter Interaction (NLMI-10); (2001) https://doi.org/10.1117/12.431214
Event: Nonresonant Laser-Matter Interaction (NLMI-10), 2000, St. Petersburg, Russian Federation

Abstract

Under the impact of powerful laser radiation in semiconductors occur processes, essentially change their properties. For instance, in (1) observed annealing of ion- implanted silicon, vastly improving quality of semiconductor devices, made form it. In (2) was observed laser-stimulated diffusion of impurity atoms on the direction to surface, and in (3) on the contrary, deep into the semiconductor. In (4) an increase of velocity of chemical reactions on semiconductor surface under the influence of laser radiation was observed. In the present work spectra of radiation reflection of low power continuous CO₂-laser from the surface of monocrystals of semiconductor A_II B_VI compounds previously irradiated by powerful pulses of CO₂ laser were investigated.

Citation Download Citation

Anel F. Mukhammedgalieva, V. S. Petukhov, and B. I. Vasiliev "Peculiarity of CO₂ laser radiation interaction with semiconductor A_IIB_VI compounds", Proc. SPIE 4423, Nonresonant Laser-Matter Interaction (NLMI-10), (26 June 2001); https://doi.org/10.1117/12.431214

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