Paper
25 February 2002 Pulsed laser deposition of nanocrystalline ZnSe:N thin films
Ning Xu, Yuancheng Du, Fuming Li, Bong Hyung Boo
Author Affiliations +
Proceedings Volume 4426, Second International Symposium on Laser Precision Microfabrication; (2002) https://doi.org/10.1117/12.456846
Event: Second International Symposium on Laser Precision Micromachining, 2001, Singapore, Singapore
Abstract
We have grown nanocrystalline ZnSe thin films on GaAs(200) substrates by pulsed laser deposition (PLD) using KrF excimer laser. Atomic force microscopy (AFM) shows that the ZnSe thin films grown on GaAs(100) at 10 torr are flat and dense and composed of crystallites with particle size of less than 100nm. X-ray diffraction (XRD) results indicated that this ZnSe thin film are of (100) crystalline orientation and the average size of crystallites is about 25nm. X-ray photoelectron spectroscopy (XPS) indicates that the as-deposited thin films contain 7%[N] and below 3% [O], and nitrogen with N-Zn, N-N or N-O bondings are respectively 55% and 45% of total contained nitrogen. Photoluminescence measurements show an donor-to acceptor pair (DAP) recombination emission with a blue shift with respect to bulk ZnSe, which reveals the activation of [N] atoms as shallow acceptors in nanocrystalline ZnSe.
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Ning Xu, Yuancheng Du, Fuming Li, and Bong Hyung Boo "Pulsed laser deposition of nanocrystalline ZnSe:N thin films", Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); https://doi.org/10.1117/12.456846
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KEYWORDS
Thin films

Nitrogen

Crystals

Pulsed laser deposition

Thin film growth

Chemical species

Atomic force microscopy

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