Bi12TiO20 single crystals doped with Cd, Cu, P, Cr, Ag, Al were grown by the top-seeded solution growth method (TSSG). The electrical measurements were carried out on different BTO samples. The electrical conductivity followed the Arrhenius low, with an activation energy ranged from 0.38 to 0.63 eV. Mobility and transport properties of charge photo carriers were investigated by the time-of-flight technique. For non-doped BTO and doped with Cu, P, Al and Cd the obtained values for drift mobility of electrons varying between (mu) equals10-2 and 1 [cm2/V.s]. In the case of BTO doped with Al the dominant charge carriers were holes with mobility (mu) equals5x10-3 [cm2/V.s]. These key photorefractive parameters were used to calculate the lifetime of charge carriers using the period of the recorded holographic photorefractive space gratings.
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