Porous silicon and cadmium-mercury-telluride (CMT)-based heterostructures for IR detectors

Liubomyr S. Monastyrskii; Andrii P. Vlasov; Roman M. Kovtun

doi:10.1117/12.448182

12 November 2001 Porous silicon and cadmium-mercury-telluride (CMT)-based heterostructures for IR detectors

Liubomyr S. Monastyrskii, Andrii P. Vlasov, Roman M. Kovtun

Proceedings Volume 4454, Materials for Infrared Detectors; (2001) https://doi.org/10.1117/12.448182
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

We were investigated the creating process of porous silicon (porSi) and CdHgTe based heterostructures for IR detectors. We were studied current-voltage characteristics, photosensitivity and photoconductivity in such heterojunctions and heterostructures after Hg ion irradiations. It was shown that studied heterostructures may be used for IR detectors.

Citation Download Citation

Liubomyr S. Monastyrskii, Andrii P. Vlasov, and Roman M. Kovtun "Porous silicon and cadmium-mercury-telluride (CMT)-based heterostructures for IR detectors", Proc. SPIE 4454, Materials for Infrared Detectors, (12 November 2001); https://doi.org/10.1117/12.448182

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