Design, growth, and characterization of GaAs/AlAs type-II superlattices

Xiaodong Mu; Yujie J. Ding; Jacob B. Khurgin; Xiaojun Wang; Junping Zhang; Fow-Sen Choa

doi:10.1117/12.460806

28 March 2002 Design, growth, and characterization of GaAs/AlAs type-II superlattices

Xiaodong Mu, Yujie J. Ding, Jacob B. Khurgin, Xiaojun Wang, Junping Zhang, Fow-Sen Choa

Proceedings Volume 4656, Quantum Dot Devices and Computing; (2002) https://doi.org/10.1117/12.460806
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

We report our recent results on characterization of GaAs/AlAs superlattices exhibiting evidence of a quasi- indirect transition between minibands. These structures have potential applications in semiconductor optical amplifiers with greatly-reduced cross-talk at high bit rates and Q-switched lasers.

Citation Download Citation

Xiaodong Mu, Yujie J. Ding, Jacob B. Khurgin, Xiaojun Wang, Junping Zhang, and Fow-Sen Choa "Design, growth, and characterization of GaAs/AlAs type-II superlattices", Proc. SPIE 4656, Quantum Dot Devices and Computing, (28 March 2002); https://doi.org/10.1117/12.460806

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