Application Of Contrast-Enhanced Lithography To 1:1 Projection Printing

B. F. Griffing; P. R. West; E. W. Balch

doi:10.1117/12.941782

21 May 1984 Application Of Contrast-Enhanced Lithography To 1:1 Projection Printing

B. F. Griffing, P. R. West, E. W. Balch

Proceedings Volume 0469, Advances in Resist Technology I; (1984) https://doi.org/10.1117/12.941782
Event: 1984 Microlithography Conferences, 1984, Santa Clara, United States

Abstract

Contrast-enhanced lithography (CEL) is a high-resolution, photolithographic technique which utilizes photobleachable materials in conjunction with conventional resist. The basic CEL concept, material requirements and applications to 10:1 lithography have been described previously. 1,2,3 In this paper we describe the application of this process to 1:1 projection lithography. A comparison of the defect density and linewidth control achieved with both conventional positive resist and CEL is made. These data are collected using electrical measurements on test structures fabricated with a Perkin-Elmer 321. The use of bleachable materials with conventional photoresists results in an increase in required exposure time for any given set of exposure conditions. An experimental analysis of the exposure time penalty vs. the line profile benefit will be presented. Another interesting application for CEL is maskmaking. With continued interest in 1:1 lithography, improved resolution in maskmaking is needed. While this application has not been investigated extensively, preliminary experiments suggest that significant improvements in resolution can be achieved when CEL is employed instead of the standard resist process. Experiments carried out using an Electromask 10:1 maskmaker will be presented.

Citation Download Citation

B. F. Griffing, P. R. West, and E. W. Balch "Application Of Contrast-Enhanced Lithography To 1:1 Projection Printing", Proc. SPIE 0469, Advances in Resist Technology I, (21 May 1984); https://doi.org/10.1117/12.941782

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