Paper
19 April 2002 Fabrication of suspended membranes for thermal sensors using high-density plasma etching
Angeliki Tserepi, C. Tsamis, Evangelos Gogolides, A. G. Nassiopoulou
Author Affiliations +
Proceedings Volume 4755, Design, Test, Integration, and Packaging of MEMS/MOEMS 2002; (2002) https://doi.org/10.1117/12.462883
Event: Symposium on Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, 2002, Cannes-Mandelieu, France
Abstract
In this work, we describe a front-side Si micromachining process for the fabrication of suspended membranes for thermal sensors. Membrane release is achieved by means of lateral isotropic etching of the bulk silicon substrate, the etching being optimized for high rates and high selectivity with respect to the membrane material and the photoresist that is used to protect the device. Lateral Si etch rates of the order of 6-7 micrometers /min have been achieved in a high- density F-based plasma, which permits a reasonable etching time for the release of the membrane and the simultaneous formation of the cavity underneath that ensure thermal isolation of the final device.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Angeliki Tserepi, C. Tsamis, Evangelos Gogolides, and A. G. Nassiopoulou "Fabrication of suspended membranes for thermal sensors using high-density plasma etching", Proc. SPIE 4755, Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, (19 April 2002); https://doi.org/10.1117/12.462883
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Etching

Silicon

Plasma

Photoresist materials

Ions

Plasma etching

Isotropic etching

Back to Top