Uncooled amorphous silicon technology enhancement for 25-um-pixel pitch achievement

Eric Mottin; Astrid Bain; Jean-Luc Martin; Jean-Louis Ouvrier-Buffet; Sylvette Bisotto; Jean-Jacques Yon; Jean-Luc Tissot

doi:10.1117/12.464848

23 January 2003 Uncooled amorphous silicon technology enhancement for 25-μm pixel pitch achievement

Eric Mottin, Astrid Bain, Jean-Luc Martin, Jean-Louis Ouvrier-Buffet, Sylvette Bisotto, Jean-Jacques Yon, Jean-Luc Tissot

Author Affiliations +

Proceedings Volume 4820, Infrared Technology and Applications XXVIII; (2003) https://doi.org/10.1117/12.464848
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

The emergence of uncooled infrared detectors has opened new opportunities for IR imaging both for military and civil applications. Infrared imaging sensors that operate without cryogenic cooling have the potential to provide the military or civilian users with infrared vision capabilities packaged in a camera of extremely small size, weight and power. Uncooled infrared sensor technology has advanced rapidly in the past few years. Higher performance sensors, electronics integration at the sensor, and new concepts for signal processing are generating advanced infrared focal plane arrays. This would significantly reduce the cost and accelerate the implementation of sensors for applications such as surveillance or predictive maintenance. We present the uncooled infrared detector operation principle and the development at CEA/LETI from the 256×64 with a pitch of 50 μm to the 320×240 with a pitch of 35 μm. LETI has been involved in Amorphous Silicon uncooled microbolometer development since 1992. This silicon IR detection is now well mastered and matured so that industrial transfer of LETI technology was performed in 2000 towards Sofradir. Industrial production of 320 μ240 microbolometer array with 45μm pitch is then started., we present the readout circuit architectures designs and its evolution from the 256×64 array to the different version of 320×240 arrays. Electro-optical results obtained from these IRCMOS are presented. NEDT close to 30 mK is now obtained with our standard microbolometer amorphous silicon technology.

Citation Download Citation

Eric Mottin, Astrid Bain, Jean-Luc Martin, Jean-Louis Ouvrier-Buffet, Sylvette Bisotto, Jean-Jacques Yon, and Jean-Luc Tissot "Uncooled amorphous silicon technology enhancement for 25-μm pixel pitch achievement", Proc. SPIE 4820, Infrared Technology and Applications XXVIII, (23 January 2003); https://doi.org/10.1117/12.464848

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