Paper
17 February 2003 Direct diode-pumping of a Cr4+:YAG laser with high brightness InGaAs laser diodes
A. John Alcock, K. Hnatovsky, P. Scorah
Author Affiliations +
Proceedings Volume 4833, Applications of Photonic Technology 5; (2003) https://doi.org/10.1117/12.474408
Event: Applications of Photonic Technology 5, 2002, Quebec City, Canada
Abstract
The 970 nm radiation generated by a 4 W, 0.1 mm wide, InGaAs laser diode has been used to pump a Cr4+:YAG laser. With 3.3 W incident on the 10 mm long Cr:YAG crystal a maximum CW output of 90 mW has been obtained. Inserting a single plate birefringent tuner within the laser resonator permitted the laser wavelength to be tuned between 1380 and 1495 nm, with a peak output power of 11 mW at 1450 nm.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. John Alcock, K. Hnatovsky, and P. Scorah "Direct diode-pumping of a Cr4+:YAG laser with high brightness InGaAs laser diodes", Proc. SPIE 4833, Applications of Photonic Technology 5, (17 February 2003); https://doi.org/10.1117/12.474408
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KEYWORDS
Crystals

Semiconductor lasers

Diodes

Indium gallium arsenide

Laser crystals

Laser resonators

Mirrors

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