Micro Raman scattering of InxGa1-xAs/InP grown by LPMOCVD

Guoqing Miao; Yixin Jin; Xianggui Kong; Hong Jiang; Shuwei Li; Guang Yuan; Hong Song

doi:10.1117/12.465654

20 September 2002 Micro-Raman scattering of In_xGa_1-xAs/InP grown by LPMOCVD

Guoqing Miao, Yixin Jin, Xianggui Kong, Hong Jiang, Shuwei Li, Guang Yuan, Hong Song

Proceedings Volume 4919, Advanced Materials and Devices for Sensing and Imaging; (2002) https://doi.org/10.1117/12.465654
Event: Photonics Asia, 2002, Shanghai, China

Abstract

The In_xGa_1-xAs/InP was grown by low-pressure metalorganic chemical vapor deposition (LPMOCVD). We used Raman spectroscopy to characterize the quality of epilayers and measure the strain. Raman spectra from In_xGa_1-xAs epitaxial layers of various compositions were studied. Raman spectra were obtained at 300K, 248K, 193K, 138K, and 80K. The difference in the frequencies of their GaAs-like LO phonons was to calculate stress for the InGaAs/InP, leading to direct formula for the evaluation of the epilayer stress.

Citation Download Citation

Guoqing Miao, Yixin Jin, Xianggui Kong, Hong Jiang, Shuwei Li, Guang Yuan, and Hong Song "Micro-Raman scattering of In_xGa_1-xAs/InP grown by LPMOCVD", Proc. SPIE 4919, Advanced Materials and Devices for Sensing and Imaging, (20 September 2002); https://doi.org/10.1117/12.465654

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