Magnetostrictive characteristics of Tb-Fe-Si thin films prepared by magnetron sputtering

Mitsuaki Takeuchi; Yoshihito Matsumura; Hirohisa Uchida; Toshiro Kuji

doi:10.1117/12.469172

13 November 2002 Magnetostrictive characteristics of Tb-Fe-Si thin films prepared by magnetron sputtering

Mitsuaki Takeuchi, Yoshihito Matsumura, Hirohisa Uchida, Toshiro Kuji

Proceedings Volume 4934, Smart Materials II; (2002) https://doi.org/10.1117/12.469172
Event: SPIE's International Symposium on Smart Materials, Nano-, and Micro- Smart Systems, 2002, Melbourne, Australia

Abstract

Giant magnetostrictive (GM) Tb-Fe-Si films were prepared by magnetron sputtering system. X-ray diffraction pattern showed film samples were in amorphous state. The Tb-Fe-Si film (Tb : Fe : Si = 1 : 2.7 : 0.2) prepared at 373 K showed 30 MPa tensile stresses generated by magnetostriction along in-plane direction. The film sample showed about 4.3 μΩm of electrical resistivity that is about 100 times larger than that of TbFe₂ film shown about 5.9 × 10^-2 μΩm. The film sample coercivity was 360 Oe. Magnetization of the film sample at 15 kOe of applied magnetic field in parallel direction to the film surface exhibited 81.0 emu/cc. We prepared giant magnetostrictive thin film with higher electrical resistivity than that of TbFe2 thin film.

Citation Download Citation

Mitsuaki Takeuchi, Yoshihito Matsumura, Hirohisa Uchida, and Toshiro Kuji "Magnetostrictive characteristics of Tb-Fe-Si thin films prepared by magnetron sputtering", Proc. SPIE 4934, Smart Materials II, (13 November 2002); https://doi.org/10.1117/12.469172

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