High-performance of single mode InAs/InGaAs/GaAs quantum dot lasers of 1.3-micron range

Daniil A. Livshits; Alexey R. Kovsh; Nikolay A. Maleev; Alexey E. Zhukov; Victor M. Ustinov; Nikolai N. Ledentsov; Zhores I. Alferov; Dieter Bimberg; Gray Lin; Jim Chi

doi:10.1117/12.479825

1 July 2003 High-performance of single mode InAs/InGaAs/GaAs quantum dot lasers of 1.3-micron range

Daniil A. Livshits, Alexey R. Kovsh, Nikolay A. Maleev, Alexey E. Zhukov, Victor M. Ustinov, Nikolai N. Ledentsov, Zhores I. Alferov, Dieter Bimberg, Gray Lin, Jim Chi

Author Affiliations +

Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003) https://doi.org/10.1117/12.479825
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

Quantum dot (QD) is one of the most perspective candidates to be used as an active region of temperature-insensitive 1.3-micron GaAs based lasers for optical networks. However, the limited optical gain achievable in QD ground state hindered their practical use. In this work we have demonstrated that using of high number of QDs stacks grown under proper conditions by MBE is an effective way to considerably increase the optical gain of QD lasers. Ridge waveguide laser diodes with width of 2.7 μm and 4.5 μm based on various numbers of QD layers (N=2, 5, 10) were fabricated and studied in this work. Ultra-low threshold current of 1.43 mA was achieved for 2-stack QD. Regime of simultaneous lasing at ground- and excited-states was discovered. This effect was accounted for the finite time of carriers capture to the ground-state in QD. Multi-stack QD structures enabled to maintain continuous work ground-state lasing up to the current density of 10 kA = 100xJ_th. Enhanced optical gain allowed us to unite very high differential efficiency (>75%) with low threshold current (<100 A/cm²) and characteristic temperature (T₀>100K). For example, laser diode of 1-mm cavity length has shown single mode output power of 100mW at operating current of 195 mA and at high operation power demonstrated insensibility to the changes of temperature. The combination of parameters achieved is quite competitive to all technologies currently used for 1.3-micron lasers including traditional InP-based lasers and makes QD gain medium very promising for VCSEL and telecom laser applications.

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Daniil A. Livshits, Alexey R. Kovsh, Nikolay A. Maleev, Alexey E. Zhukov, Victor M. Ustinov, Nikolai N. Ledentsov, Zhores I. Alferov, Dieter Bimberg, Gray Lin, and Jim Chi "High-performance of single mode InAs/InGaAs/GaAs quantum dot lasers of 1.3-micron range", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); https://doi.org/10.1117/12.479825

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