Paper
11 June 2003 14XX nm pump lases for Raman and Er3+ doped fiber amplifiers
Natalia V. Fetisova, Nikita A. Pikhtin, Ekaterina G. Golikova, A. Yu Leshko, Andrei V. Lyutetskiy, S. O. Slipchenko, Z. N. Sokolova, Ilya S. Tarasov
Author Affiliations +
Abstract
A set of high power single mode InGaAsP/InP ridge waveguide laser diodes emitting in 1440 - 1500 nm range on peak wavelengths used for optical fiber pumping were developed and fabricated. Room temperature continuous wave output power of 300 mW was reached. Stable operation on fundamental optical mode with only 1° increase of lateral far-field pattern FWHM was confirmed up to 180 mW output power.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Natalia V. Fetisova, Nikita A. Pikhtin, Ekaterina G. Golikova, A. Yu Leshko, Andrei V. Lyutetskiy, S. O. Slipchenko, Z. N. Sokolova, and Ilya S. Tarasov "14XX nm pump lases for Raman and Er3+ doped fiber amplifiers", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514350
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconductor lasers

Heterojunctions

Fiber amplifiers

Raman spectroscopy

Semiconducting wafers

Continuous wave operation

Diodes

RELATED CONTENT

Type I QW cascade diode lasers with 830 mW of...
Proceedings of SPIE (March 10 2015)
Analysis of the power scaling of resonantly pumped Tm doped...
Proceedings of SPIE (September 17 2013)
Alkali lasers a new type of scalable high power...
Proceedings of SPIE (May 17 2010)
Advances in high-power fiber-coupled laser diodes
Proceedings of SPIE (January 15 1996)
Analysis and experimental study of 14xx-nm Raman fiber laser
Proceedings of SPIE (December 02 2005)
Continuous wave AlGaAs laser diode bar parameters
Proceedings of SPIE (June 16 1993)

Back to Top