Influence of intraband relaxation processes on threshold and power-current characteristics of quantum well lasers

Georgy G. Zegrya; Irina A. Kostko; Natalya A. Gunko; Eugen B. Dogonkin

doi:10.1117/12.514389

11 June 2003 Influence of intraband relaxation processes on threshold and power-current characteristics of quantum well lasers

Georgy G. Zegrya, Irina A. Kostko, Natalya A. Gunko, Eugen B. Dogonkin

Author Affiliations +

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.514389
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

The effect of carrier-carrier relaxation on threshold and power-current characteristics of InAs and GaAs quantum well (QW) lasers is studied. Dependence of carrier relaxation time on temperature and carrier density is considered. It is shown that in this case the gain coefficient becomes a more pronounced function of temperature and carrier density, and threshold current density increases drastically.

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Georgy G. Zegrya, Irina A. Kostko, Natalya A. Gunko, and Eugen B. Dogonkin "Influence of intraband relaxation processes on threshold and power-current characteristics of quantum well lasers", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514389

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