Concept of ultra-fast at-wavelength inspection of defects on a multilayer mask using a laser-produced plasma source

Toshihisa Tomie; Tsuneo Terasawa; Yoshihiro Tezuka; Masaaki Ito

doi:10.1117/12.482811

2 June 2003 Concept of ultra-fast at-wavelength inspection of defects on a multilayer mask using a laser-produced plasma source

Toshihisa Tomie, Tsuneo Terasawa, Yoshihiro Tezuka, Masaaki Ito

Author Affiliations +

Proceedings Volume 5038, Metrology, Inspection, and Process Control for Microlithography XVII; (2003) https://doi.org/10.1117/12.482811
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

New configuration is presented for ultra-fast at-wavelength inspection of defects on multilayer mask blanks. Key ideas are detecting defects in a high NA dark-field observation by using a Schwarzschild objective, sub-micron resolution 2D imaging of mask surface on a detector, and large etendue illumination by using a laser-plasma source. Expected time for inspecting a whole mask is shorter than 2 hours.

Citation Download Citation

Toshihisa Tomie, Tsuneo Terasawa, Yoshihiro Tezuka, and Masaaki Ito "Concept of ultra-fast at-wavelength inspection of defects on a multilayer mask using a laser-produced plasma source", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); https://doi.org/10.1117/12.482811

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