Properties of shallow electron trap dopants in AgCl optical storage materials

Aicong Geng; Xiao-Wei Li; Shaopeng Yang; Guoyi Dong; Guangsheng Fu

doi:10.1117/12.510542

9 April 2003 Properties of shallow electron trap dopants in AgCl optical storage materials

Aicong Geng, Xiao-Wei Li, Shaopeng Yang, Guoyi Dong, Guangsheng Fu

Proceedings Volume 5060, Sixth International Symposium on Optical Storage (ISOS 2002); (2003) https://doi.org/10.1117/12.510542
Event: Sixth International Symposium on Optical Storage (ISOS 2002), 2002, Wuhan, China

Abstract

Using a computer simulation, AgCl emulsions doped with [Fe(CN)₆]^4- complexes and a reference AgCl emulsion without dopants have been investigated at room temperature, and the free photoelectron decay time (FPT) was obtained. According to compare with the experimental results obtained by microwave absorption dielectric spectrum detection technology, the shallow electron traps (SETs) information was gotten. In this simulation, a model, which consists of a [Fe(CN)₆]^4- related SETs and intrinsic centers including two types of electron traps and a recombination center, is proposed. The model results in a set of differential equations that describe the kinetics of photographic generation, trapping, thermal detrapping and recombination processes. The FPT was simulated through solving these differential equations. Adjusting the simulation parameters of SETs to fit the experimental data, a number of important conclusions about SETs dopants were drawn from the simulation study.

Citation Download Citation

Aicong Geng, Xiao-Wei Li, Shaopeng Yang, Guoyi Dong, and Guangsheng Fu "Properties of shallow electron trap dopants in AgCl optical storage materials", Proc. SPIE 5060, Sixth International Symposium on Optical Storage (ISOS 2002), (9 April 2003); https://doi.org/10.1117/12.510542

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