Flicker noise characterization and modeling of MOSFETs for RF IC design

Yuhua Cheng

doi:10.1117/12.497094

12 May 2003 Flicker noise characterization and modeling of MOSFETs for RF IC design

Yuhua Cheng

Proceedings Volume 5113, Noise in Devices and Circuits; (2003) https://doi.org/10.1117/12.497094
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States

Abstract

This paper reviews the recent results of the flicker noise characterization and modeling of MOSFETs for RF IC design. The dependences of flicker noise characteristics to process parameters, such as the thickness and quality of gate oxide, and the device parameters, such as the channel length/width and fingers, have been summarized to better understand the flicker noise bahavior and develop physical and accurate flicker noise models. The physical origin of the flicker noise and the issues of the existing compact models in predicting the flicker noise characteristics have been also discussed. Furthermore, the impact of flicker noise to the phase noise of RF circuits is studied while looking for either process or circuit approaches to reduce the influence of flicker noise contribution to the circuit noise. Finally, some modeling approaches are proposed to improve existing compact flicker noise models to predict the noise behavior of RF circuits well.

Citation Download Citation

Yuhua Cheng "Flicker noise characterization and modeling of MOSFETs for RF IC design", Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); https://doi.org/10.1117/12.497094

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