Low-frequency noise behavior of polysilicon emitter bipolar junction transistors: a review

M. Jamal Deen; Fabien Pascal

doi:10.1117/12.488850

12 May 2003 Low-frequency noise behavior of polysilicon emitter bipolar junction transistors: a review

M. Jamal Deen, Fabien Pascal

Author Affiliations +

Proceedings Volume 5113, Noise in Devices and Circuits; (2003) https://doi.org/10.1117/12.488850
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States

Abstract

For many analog integrated circuit applications, the polysilicon emitter bipolar junction transistor (PE-BJT) is still the preferred choice because of its higher operational frequency and lower noise performance characteristics compared to MOS transistors of similar active areas and at similar biasing currents. In this paper, we begin by motivating the reader with reasons why bipolar transistors are still of great interest for analog integrated circuits. This motivation includes a comparison between BJT and the MOSFET using a simple small-signal equivalent circuit to derive important parameters that can be used to compare these two technologies. An extensive review of the popular theories used to explain low frequency noise results is presented. However, in almost all instances, these theories have not been fully tested. The effects of different processing technologies and conditions on the noise performance of PE-BJTs is reviewed and a summary of some of the key technological steps and device parameters and their effects on noise is discussed. The effects of temperature and emitter geometries scaling is reviewed. It is shown that dispersion of the low frequency noise in ultra-small geometries is a serious issue since the rate of increase of the noise dispersion is faster than the noise itself as the emitter geometry is scaled to smaller values. Finally, some ideas for future research on PE-BJTs, some of which are also applicable to SiGe heteorjunction bipolar transistors and MOSFETs, are presented after the conclusions.

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M. Jamal Deen and Fabien Pascal "Low-frequency noise behavior of polysilicon emitter bipolar junction transistors: a review", Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); https://doi.org/10.1117/12.488850

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KEYWORDS

Oxides

Transistors

Interfaces

Field effect transistors

Silicon

Analog electronics

Fluorine

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