Silicon waveguide fabrication process based on the anisotropic etching of Si<111>-oriented wafers

Dana Cristea; Paula Obreja; Elena Manea; M. Kusko

doi:10.1117/12.520045

30 September 2003 Silicon waveguides fabrication process based on the anisotropic etching of Si<111>-oriented wafers

Dana Cristea, Paula Obreja, Elena Manea, M. Kusko

Proceedings Volume 5227, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies; (2003) https://doi.org/10.1117/12.520045
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

The fabrication process of c-Si waveguides based on the anisotropic etching of Si<111> oriented wafers is described. To obtain c-Si waveguides, the anisotropic etching was combined with an isotropic pre-etch step to a depth equal to the thickness of the final c-Si freestanding structure, followed by side-wall passivation. In addition, a second pre-etching step was performed to establish the depth of the air gap that acts as the bottom cladding of the waveguide. Freestanding c-Si waveguides with very smooth surfaces were obtained by anisotropic etching in a KOH solution. By using a Si₃N₄/SiO₂ mask layer, double waveguides were obtained. The possible applications of c-Si based free standing structures include devices for optical communications and evanescent-wave bio- or chemical sensors.

Citation Download Citation

Dana Cristea, Paula Obreja, Elena Manea, and M. Kusko "Silicon waveguides fabrication process based on the anisotropic etching of Si<111>-oriented wafers", Proc. SPIE 5227, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies, (30 September 2003); https://doi.org/10.1117/12.520045

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