Paper
23 December 2003 Automated full-field interferometric characterization of micromachined silicon membrane
Author Affiliations +
Abstract
Among the current commercial micromachined devices, pressure sensors are by far the most successful and popular products. They work to sense the displacement-induced stresses of a silicon membrane with the thickness at the micro-scale. The miniature dimension of such devices, coupled with the demand of accurate deflection measurement for performance characterization, make suitable metrological tools in immediate need. In this paper, we present a digital micro-holo interferometric method for realizing highly sensitive measurement of the full-field displacement over the global test structure. Through the analysis on the system principles, the pressure-induced membrane deflection are accurately measured, and further determination of strain and stress is accomplished based on the verified FE model. From the obtained stress-pressure relation, the sensitivity of the pressure sensor is thus characterized.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lei Xu, Xiaoyuan Peng, Jianmin Miao, and Anand K. Asundi "Automated full-field interferometric characterization of micromachined silicon membrane", Proc. SPIE 5343, Reliability, Testing, and Characterization of MEMS/MOEMS III, (23 December 2003); https://doi.org/10.1117/12.524977
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KEYWORDS
Sensors

Silicon

Interferometry

Crystals

Digital holography

Imaging systems

Microscopes

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