Polarized Laser Scan Technique For Patterned Wafer Surface Contaminants Inspection

Mitsuyoshi Koizumi; Nobuyuki Akiyama

doi:10.1117/12.947770

23 July 1985 Polarized Laser Scan Technique For Patterned Wafer Surface Contaminants Inspection

Mitsuyoshi Koizumi, Nobuyuki Akiyama

Proceedings Volume 0538, Optical Microlithography IV; (1985) https://doi.org/10.1117/12.947770
Event: 1985 Microlithography Conferences, 1985, Santa Clara, United States

Abstract

A new system for detecting contaminants on patterned Si wafers is described. The system employs a linearly polarized He-Ne laser light to scan obliquely across the wafer surfaces, and optical detection technique to distinguish the contaminants from the patterns by measuring the polarization of the light reflected from both the contaminants and the patterns.

Citation Download Citation

Mitsuyoshi Koizumi and Nobuyuki Akiyama "Polarized Laser Scan Technique For Patterned Wafer Surface Contaminants Inspection", Proc. SPIE 0538, Optical Microlithography IV, (23 July 1985); https://doi.org/10.1117/12.947770

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