Paper
20 August 2004 Feedforward correction of mask image placement for proximity electron lithography
Shinji Omori, Shinichiro Nohdo, Tomonori Motohashi, Tetsuya Kitagawa, Takashi Susa, Kenta Yotsui, Kojiro Itoh, Akira Tamura
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Abstract
A production-compatible method for the correction of image-placement (IP) error over a 1x stencil mask as used for proximity electron lithography (PEL) has been demonstrated. The mask IP error as measured using a newly developed metrology tool was fed forward to the PEL stepper, LEEPL-3000 and corrected for via the fine deflection of the electron beam. The overlay errors with respect to the substrate patterned by the ArF scanner have decreased from 63.6/59.3 nm to 26.1/36.4 nm in the x/y directions, but they are still larger than the errors of 15.2/14.8 nm for the conventional feedback method. Therefore, some improvements in the metrology method, the mask chucking method, the mask flatness and so on are required.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shinji Omori, Shinichiro Nohdo, Tomonori Motohashi, Tetsuya Kitagawa, Takashi Susa, Kenta Yotsui, Kojiro Itoh, and Akira Tamura "Feedforward correction of mask image placement for proximity electron lithography", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557821
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KEYWORDS
Photomasks

Semiconducting wafers

Overlay metrology

Metrology

Lithography

Distortion

Scanners

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