Paper
20 August 2004 Performance data on new tunable attenuating PSM for 193-nm and 157-nm lithography
Hans W. Becker, Frank Schmidt, Frank Sobel, Markus Renno, Ute Buttgereit, Jay Chey, Marie Angelopoulos, Konrad Knapp, Gunter Hess
Author Affiliations +
Abstract
A new phase shifting film system based on tantalum and silicon dioxide is presented. The tantalum film works as a transmission control layer and furthermore as an etch stop layer due to its good etch selectivity. The silicon dioxide phase control layer is tuned to 180° phase shift. Excellent laser stability and chemical durability were already shown. The two layer system can be easily tuned to various transmission values for three different lithography wavelengths. Transmission and phase shift uniformity fulfill already the final production specifications according to ITRS. An optimized deposition process yields excellent film surface roughness values equal to an uncoated substrate. Defect density could be significantly reduced recently. First SEM pictures of structured films show promising results.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hans W. Becker, Frank Schmidt, Frank Sobel, Markus Renno, Ute Buttgereit, Jay Chey, Marie Angelopoulos, Konrad Knapp, and Gunter Hess "Performance data on new tunable attenuating PSM for 193-nm and 157-nm lithography", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557798
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Particles

Phase shifts

Silica

Lithography

Etching

Photomasks

Scanning electron microscopy

Back to Top